Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/ieicet/WangCL12
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chi-Chang_Lin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jinn-Shyan_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Pei-Yao_Chang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1587%2Ftransele.E95.C.172
>
foaf:
homepage
<
https://doi.org/10.1587/transele.E95.C.172
>
dc:
identifier
DBLP journals/ieicet/WangCL12
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1587%2Ftransele.E95.C.172
(xsd:string)
dcterms:
issued
2012
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/ieicet
>
rdfs:
label
Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chi-Chang_Lin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jinn-Shyan_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Pei-Yao_Chang
>
swrc:
number
1
(xsd:string)
swrc:
pages
172-175
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/ieicet/WangCL12/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/ieicet/WangCL12
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/ieicet/ieicet95c.html#WangCL12
>
rdfs:
seeAlso
<
https://doi.org/10.1587/transele.E95.C.172
>
dc:
title
Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
95-C
(xsd:string)