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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicet/YoshidaILWT05>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hironari_Takehara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiang_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nariaki_Ikeda>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seikoh_Yoshida>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takahiro_Wada>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1093%2Fietele%2Fe88-c.4.690>
foaf:homepage <https://doi.org/10.1093/ietele/e88-c.4.690>
dc:identifier DBLP journals/ieicet/YoshidaILWT05 (xsd:string)
dc:identifier DOI doi.org%2F10.1093%2Fietele%2Fe88-c.4.690 (xsd:string)
dcterms:issued 2005 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicet>
rdfs:label Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hironari_Takehara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiang_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nariaki_Ikeda>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seikoh_Yoshida>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takahiro_Wada>
swrc:number 4 (xsd:string)
swrc:pages 690-693 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicet/YoshidaILWT05/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicet/YoshidaILWT05>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicet/ieicet88c.html#YoshidaILWT05>
rdfs:seeAlso <https://doi.org/10.1093/ietele/e88-c.4.690>
dc:title Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 88-C (xsd:string)