Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Eun-Ki_Hong>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Kyung_Eun_Park>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1587%2Ftransele.2021fup0005>
foaf:homepage	<https://doi.org/10.1587/transele.2021fup0005>
dc:identifier	DBLP journals/ieicetc/HongPO22 (xsd:string)
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dcterms:issued	2022 (xsd:gYear)
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rdfs:label	Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Eun-Ki_Hong>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Kyung_Eun_Park>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
swrc:month	October (xsd:string)
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rdfs:seeAlso	<https://doi.org/10.1587/transele.2021fup0005>
dc:title	Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. (xsd:string)
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