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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicetc/KumazakiOOHNSO23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masaru_Sato_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Naoki_Hara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Naoya_Okamoto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shiro_Ozaki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshihiro_Ohki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yasuhiro_Nakasha>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yusuke_Kumazaki>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Ftransele.2023mmp0005>
foaf:homepage <https://doi.org/10.1587/transele.2023mmp0005>
dc:identifier DBLP journals/ieicetc/KumazakiOOHNSO23 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Ftransele.2023mmp0005 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicetc>
rdfs:label High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masaru_Sato_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Naoki_Hara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Naoya_Okamoto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shiro_Ozaki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshihiro_Ohki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yasuhiro_Nakasha>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yusuke_Kumazaki>
swrc:month November (xsd:string)
swrc:number 11 (xsd:string)
swrc:pages 661-668 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicetc/KumazakiOOHNSO23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicetc/KumazakiOOHNSO23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicetc/ieicetc106.html#KumazakiOOHNSO23>
rdfs:seeAlso <https://doi.org/10.1587/transele.2023mmp0005>
dc:title High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 106 (xsd:string)