Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jun_Yoneda>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Kimihiko_Kato>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Raisei_Mizokuchi>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Shimpei_Nishiyama>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Takahiro_Mori>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Tetsuo_Kodera>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yongxun_Liu>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1587%2Ftransele.2022fus0002>
foaf:homepage	<https://doi.org/10.1587/transele.2022fus0002>
dc:identifier	DBLP journals/ieicetc/NishiyamaKLMYKM23 (xsd:string)
dc:identifier	DOI doi.org%2F10.1587%2Ftransele.2022fus0002 (xsd:string)
dcterms:issued	2023 (xsd:gYear)
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rdfs:label	Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jun_Yoneda>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Kimihiko_Kato>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Raisei_Mizokuchi>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Shimpei_Nishiyama>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Takahiro_Mori>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Tetsuo_Kodera>
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swrc:month	October (xsd:string)
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rdfs:seeAlso	<https://doi.org/10.1587/transele.2022fus0002>
dc:title	Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. (xsd:string)
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