In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ieicetc/OhmiIHK20
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dcterms:
bibliographicCitation
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http://dblp.uni-trier.de/rec/bibtex/journals/ieicetc/OhmiIHK20
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2020
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In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.
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In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.
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