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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicetc/ShinTO23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Joong-Won_Shin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masakazu_Tanuma>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Ftransele.2022fup0003>
foaf:homepage <https://doi.org/10.1587/transele.2022fup0003>
dc:identifier DBLP journals/ieicetc/ShinTO23 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Ftransele.2022fup0003 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicetc>
rdfs:label Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Joong-Won_Shin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masakazu_Tanuma>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
swrc:month October (xsd:string)
swrc:number 10 (xsd:string)
swrc:pages 581-587 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicetc/ShinTO23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicetc/ShinTO23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicetc/ieicetc106.html#ShinTO23>
rdfs:seeAlso <https://doi.org/10.1587/transele.2022fup0003>
dc:title Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 106 (xsd:string)