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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicetc/SugiuraY23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshihiko_Yoshimasu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Sugiura>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Ftransele.2022cdp0002>
foaf:homepage <https://doi.org/10.1587/transele.2022cdp0002>
dc:identifier DBLP journals/ieicetc/SugiuraY23 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Ftransele.2022cdp0002 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicetc>
rdfs:label Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshihiko_Yoshimasu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Sugiura>
swrc:month July (xsd:string)
swrc:number 7 (xsd:string)
swrc:pages 382-390 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicetc/SugiuraY23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicetc/SugiuraY23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicetc/ieicetc106.html#SugiuraY23>
rdfs:seeAlso <https://doi.org/10.1587/transele.2022cdp0002>
dc:title Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 106 (xsd:string)