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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/iet-cds/HattoriUY17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fumiya_Hattori>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hirokatsu_Umegami>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masayoshi_Yamamoto>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1049%2Fiet-cds.2016.0244>
foaf:homepage <https://doi.org/10.1049/iet-cds.2016.0244>
dc:identifier DBLP journals/iet-cds/HattoriUY17 (xsd:string)
dc:identifier DOI doi.org%2F10.1049%2Fiet-cds.2016.0244 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/iet-cds>
rdfs:label Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fumiya_Hattori>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hirokatsu_Umegami>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masayoshi_Yamamoto>
swrc:number 3 (xsd:string)
swrc:pages 261-266 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/iet-cds/HattoriUY17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/iet-cds/HattoriUY17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds11.html#HattoriUY17>
rdfs:seeAlso <https://doi.org/10.1049/iet-cds.2016.0244>
dc:title Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 11 (xsd:string)