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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/iet-cds/RikOM23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ali_A._Orouji>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dariush_Madadi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nesa_Abedi_Rik>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1049%2Fcds2.12158>
foaf:homepage <https://doi.org/10.1049/cds2.12158>
dc:identifier DBLP journals/iet-cds/RikOM23 (xsd:string)
dc:identifier DOI doi.org%2F10.1049%2Fcds2.12158 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/iet-cds>
rdfs:label 500 V breakdown voltage in ő≤-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ali_A._Orouji>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dariush_Madadi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nesa_Abedi_Rik>
swrc:month July (xsd:string)
swrc:number 4 (xsd:string)
swrc:pages 199-204 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/iet-cds/RikOM23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/iet-cds/RikOM23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds17.html#RikOM23>
rdfs:seeAlso <https://doi.org/10.1049/cds2.12158>
dc:title 500 V breakdown voltage in ő≤-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 17 (xsd:string)