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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/iet-cds/SheikhiHG16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Akram_Sheikhi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Andrei_Grebennikov>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mohsen_Hayati>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1049%2Fiet-cds.2015.0140>
foaf:homepage <https://doi.org/10.1049/iet-cds.2015.0140>
dc:identifier DBLP journals/iet-cds/SheikhiHG16 (xsd:string)
dc:identifier DOI doi.org%2F10.1049%2Fiet-cds.2015.0140 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/iet-cds>
rdfs:label Effect of gate-to-drain and drain-to-source parasitic capacitances of MOSFET on the performance of Class-E/F3 power amplifier. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Akram_Sheikhi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Andrei_Grebennikov>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mohsen_Hayati>
swrc:number 3 (xsd:string)
swrc:pages 192-200 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/iet-cds/SheikhiHG16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/iet-cds/SheikhiHG16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds10.html#SheikhiHG16>
rdfs:seeAlso <https://doi.org/10.1049/iet-cds.2015.0140>
dc:title Effect of gate-to-drain and drain-to-source parasitic capacitances of MOSFET on the performance of Class-E/F3 power amplifier. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 10 (xsd:string)