Comparison of nano-scale complementary metal-oxide semiconductor and 3T-4T double gate fin-shaped field-effect transistors for robust and energy-efficient subthreshold logic.
Comparison of nano-scale complementary metal-oxide semiconductor and 3T-4T double gate fin-shaped field-effect transistors for robust and energy-efficient subthreshold logic.
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Comparison of nano-scale complementary metal-oxide semiconductor and 3T-4T double gate fin-shaped field-effect transistors for robust and energy-efficient subthreshold logic.
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