Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

Property	Value
dcterms:bibliographicCitation	<http://dblp.uni-trier.de/rec/bibtex/journals/iet-cds/ZhuZSLDY16>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jing_Zhu_0006>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Weifeng_Sun>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yangbo_Yi>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yangyang_Lu>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yicheng_Du>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yunwu_Zhang>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1049%2Fiet-cds.2015.0179>
foaf:homepage	<https://doi.org/10.1049/iet-cds.2015.0179>
dc:identifier	DBLP journals/iet-cds/ZhuZSLDY16 (xsd:string)
dc:identifier	DOI doi.org%2F10.1049%2Fiet-cds.2015.0179 (xsd:string)
dcterms:issued	2016 (xsd:gYear)
swrc:journal	<https://dblp.l3s.de/d2r/resource/journals/iet-cds>
rdfs:label	Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jing_Zhu_0006>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Weifeng_Sun>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yangbo_Yi>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yangyang_Lu>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yicheng_Du>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yunwu_Zhang>
swrc:number	5 (xsd:string)
swrc:pages	410-416 (xsd:string)
owl:sameAs	<http://bibsonomy.org/uri/bibtexkey/journals/iet-cds/ZhuZSLDY16/dblp>
owl:sameAs	<http://dblp.rkbexplorer.com/id/journals/iet-cds/ZhuZSLDY16>
rdfs:seeAlso	<http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds10.html#ZhuZSLDY16>
rdfs:seeAlso	<https://doi.org/10.1049/iet-cds.2015.0179>
dc:title	Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. (xsd:string)
dc:type	<http://purl.org/dc/dcmitype/Text>
rdf:type	swrc:Article
rdf:type	foaf:Document
swrc:volume	10 (xsd:string)