Extending multi-level STT-MRAM cell lifetime by minimising two-step and hard state transitions in hot bits.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/iet-cdt/AhmadIA17
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Extending multi-level STT-MRAM cell lifetime by minimising two-step and hard state transitions in hot bits.
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Extending multi-level STT-MRAM cell lifetime by minimising two-step and hard state transitions in hot bits.
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