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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ijat/Doi18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshiro_Doi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.20965%2Fijat.2018.p0143>
foaf:homepage <https://doi.org/10.20965/ijat.2018.p0143>
dc:identifier DBLP journals/ijat/Doi18 (xsd:string)
dc:identifier DOI doi.org%2F10.20965%2Fijat.2018.p0143 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ijat>
rdfs:label Editorial: Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshiro_Doi>
swrc:number 2 (xsd:string)
swrc:pages 143-144 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ijat/Doi18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ijat/Doi18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ijat/ijat12.html#Doi18>
rdfs:seeAlso <https://doi.org/10.20965/ijat.2018.p0143>
dc:title Editorial: Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 12 (xsd:string)