Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ijcta/ChawaPRJVB18
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/ijcta/ChawaPRJVB18
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Carol_de_Benito
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Francisco_Jimenez-Molinos
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Juan_Bautista_Rold%E2%88%9A%C2%B0n
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Marco_Antonio_Villena
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mohamad_Moner_Al_Chawa
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Rodrigo_Picos
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1002%2Fcta.2397
>
foaf:
homepage
<
https://doi.org/10.1002/cta.2397
>
dc:
identifier
DBLP journals/ijcta/ChawaPRJVB18
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1002%2Fcta.2397
(xsd:string)
dcterms:
issued
2018
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/ijcta
>
rdfs:
label
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Carol_de_Benito
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Francisco_Jimenez-Molinos
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Juan_Bautista_Rold%E2%88%9A%C2%B0n
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Marco_Antonio_Villena
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mohamad_Moner_Al_Chawa
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Rodrigo_Picos
>
swrc:
number
1
(xsd:string)
swrc:
pages
29-38
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/ijcta/ChawaPRJVB18/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/ijcta/ChawaPRJVB18
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/ijcta/ijcta46.html#ChawaPRJVB18
>
rdfs:
seeAlso
<
https://doi.org/10.1002/cta.2397
>
dc:
title
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
46
(xsd:string)