A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Bahareh_Seyedzadeh_Sany>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Behzad_Ebrahimi>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1002%2Fcta.3171>
foaf:homepage	<https://doi.org/10.1002/cta.3171>
dc:identifier	DBLP journals/ijcta/SanyE22 (xsd:string)
dc:identifier	DOI doi.org%2F10.1002%2Fcta.3171 (xsd:string)
dcterms:issued	2022 (xsd:gYear)
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rdfs:label	A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. (xsd:string)
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swrc:number	2 (xsd:string)
swrc:pages	417-426 (xsd:string)
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rdfs:seeAlso	<http://dblp.uni-trier.de/db/journals/ijcta/ijcta50.html#SanyE22>
rdfs:seeAlso	<https://doi.org/10.1002/cta.3171>
dc:title	A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. (xsd:string)
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