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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/integration/ShiomiIO19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hidetoshi_Onodera>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun_Shiomi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tohru_Ishihara>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.vlsi.2017.07.001>
foaf:homepage <https://doi.org/10.1016/j.vlsi.2017.07.001>
dc:identifier DBLP journals/integration/ShiomiIO19 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.vlsi.2017.07.001 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/integration>
rdfs:label Area-efficient fully digital memory using minimum height standard cells for near-threshold voltage computing. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hidetoshi_Onodera>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun_Shiomi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tohru_Ishihara>
swrc:pages 201-210 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/integration/ShiomiIO19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/integration/ShiomiIO19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/integration/integration65.html#ShiomiIO19>
rdfs:seeAlso <https://doi.org/10.1016/j.vlsi.2017.07.001>
dc:title Area-efficient fully digital memory using minimum height standard cells for near-threshold voltage computing. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 65 (xsd:string)