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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ipsj/InagakiSNMI09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dondee_Navarro>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mitiko_Miura-Mattausch>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Norio_Sadachika>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ryosuke_Inagaki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yasuaki_Inoue>
foaf:homepage <http://dx.doi.org/doi.org%2F10.2197%2Fipsjtsldm.2.93>
foaf:homepage <https://doi.org/10.2197/ipsjtsldm.2.93>
dc:identifier DBLP journals/ipsj/InagakiSNMI09 (xsd:string)
dc:identifier DOI doi.org%2F10.2197%2Fipsjtsldm.2.93 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ipsj>
rdfs:label A GIDL-Current Model for Advanced MOSFET Technologies without Binning. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dondee_Navarro>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mitiko_Miura-Mattausch>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Norio_Sadachika>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ryosuke_Inagaki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yasuaki_Inoue>
swrc:pages 93-102 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ipsj/InagakiSNMI09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ipsj/InagakiSNMI09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ipsj/ipsj2.html#InagakiSNMI09>
rdfs:seeAlso <https://doi.org/10.2197/ipsjtsldm.2.93>
dc:title A GIDL-Current Model for Advanced MOSFET Technologies without Binning. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 2 (xsd:string)