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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/jcsc/SalmanpourFA18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ava_Salmanpour>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ebrahim_Farshidi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Karim_Ansari-Asl>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1142%2FS0218126618501414>
foaf:homepage <https://doi.org/10.1142/S0218126618501414>
dc:identifier DBLP journals/jcsc/SalmanpourFA18 (xsd:string)
dc:identifier DOI doi.org%2F10.1142%2FS0218126618501414 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/jcsc>
rdfs:label A New Low Voltage Analog Circuit Model for Hodgkin-Huxley Neuron Employing FGMOS Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ava_Salmanpour>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ebrahim_Farshidi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Karim_Ansari-Asl>
swrc:number 9 (xsd:string)
swrc:pages 1850141:1-1850141:21 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/jcsc/SalmanpourFA18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/jcsc/SalmanpourFA18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/jcsc/jcsc27.html#SalmanpourFA18>
rdfs:seeAlso <https://doi.org/10.1142/S0218126618501414>
dc:title A New Low Voltage Analog Circuit Model for Hodgkin-Huxley Neuron Employing FGMOS Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 27 (xsd:string)