Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/jcsc/SharmaRR18
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/jcsc/SharmaRR18
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ashwani_K._Rana
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Rajneesh_Sharma
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Rituraj_S._Rathore
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1142%2FS0218126618500639
>
foaf:
homepage
<
https://doi.org/10.1142/S0218126618500639
>
dc:
identifier
DBLP journals/jcsc/SharmaRR18
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1142%2FS0218126618500639
(xsd:string)
dcterms:
issued
2018
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/jcsc
>
rdfs:
label
Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ashwani_K._Rana
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Rajneesh_Sharma
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Rituraj_S._Rathore
>
swrc:
number
4
(xsd:string)
swrc:
pages
1850063:1-1850063:13
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/jcsc/SharmaRR18/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/jcsc/SharmaRR18
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/jcsc/jcsc27.html#SharmaRR18
>
rdfs:
seeAlso
<
https://doi.org/10.1142/S0218126618500639
>
dc:
title
Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
27
(xsd:string)