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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/jifs/HanQDLX17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guohui_Qiao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huashuai_Xing>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ke_Han>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qingbo_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhongliang_Deng>
foaf:homepage <http://dx.doi.org/doi.org%2F10.3233%2FJIFS-169319>
foaf:homepage <https://doi.org/10.3233/JIFS-169319>
dc:identifier DBLP journals/jifs/HanQDLX17 (xsd:string)
dc:identifier DOI doi.org%2F10.3233%2FJIFS-169319 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/jifs>
rdfs:label The optimal geometry parameters and impact of parasitic capacitance and resistance of sub-14nm SOI multi-fin FinFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guohui_Qiao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huashuai_Xing>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ke_Han>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qingbo_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhongliang_Deng>
swrc:number 5 (xsd:string)
swrc:pages 2699-2709 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/jifs/HanQDLX17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/jifs/HanQDLX17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/jifs/jifs33.html#HanQDLX17>
rdfs:seeAlso <https://doi.org/10.3233/JIFS-169319>
dc:title The optimal geometry parameters and impact of parasitic capacitance and resistance of sub-14nm SOI multi-fin FinFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 33 (xsd:string)