Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/jifs/ZhouWZHZSLZSZ23
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/jifs/ZhouWZHZSLZSZ23
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fang_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kai_Hu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kailiang_Zhang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ke_Shan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Qiaozhen_Zhou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Lin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Shan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xuanyu_Zhao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yujian_Zhang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yupeng_Zhang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.3233%2FJIFS-232028
>
foaf:
homepage
<
https://doi.org/10.3233/JIFS-232028
>
dc:
identifier
DBLP journals/jifs/ZhouWZHZSLZSZ23
(xsd:string)
dc:
identifier
DOI doi.org%2F10.3233%2FJIFS-232028
(xsd:string)
dcterms:
issued
2023
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/jifs
>
rdfs:
label
Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fang_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kai_Hu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kailiang_Zhang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ke_Shan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Qiaozhen_Zhou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Lin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Shan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xuanyu_Zhao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yujian_Zhang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yupeng_Zhang
>
swrc:
number
3
(xsd:string)
swrc:
pages
5159-5167
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/jifs/ZhouWZHZSLZSZ23/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/jifs/ZhouWZHZSLZSZ23
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/jifs/jifs45.html#ZhouWZHZSLZSZ23
>
rdfs:
seeAlso
<
https://doi.org/10.3233/JIFS-232028
>
dc:
title
Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
45
(xsd:string)