Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 őľm CMOS.
Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 őľm CMOS.
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Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 őľm CMOS.
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