A 16 nm 128 Mb SRAM in High-őļ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/jssc/ChenCWLPLCLLCWC15
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/jssc/ChenCWLPLCLLCWC15
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kuo-Hua_Pan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Quincy_Li
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tang-Hsuan_Chung
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Cheng_Wu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FJSSC.2014.2349977
>
foaf:
homepage
<
https://doi.org/10.1109/JSSC.2014.2349977
>
dc:
identifier
DBLP journals/jssc/ChenCWLPLCLLCWC15
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FJSSC.2014.2349977
(xsd:string)
dcterms:
issued
2015
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/jssc
>
rdfs:
label
A 16 nm 128 Mb SRAM in High-őļ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kuo-Hua_Pan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Quincy_Li
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tang-Hsuan_Chung
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Cheng_Wu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen
>
swrc:
number
1
(xsd:string)
swrc:
pages
170-177
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/jssc/ChenCWLPLCLLCWC15/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/jssc/ChenCWLPLCLLCWC15
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#ChenCWLPLCLLCWC15
>
rdfs:
seeAlso
<
https://doi.org/10.1109/JSSC.2014.2349977
>
dc:
title
A 16 nm 128 Mb SRAM in High-őļ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
50
(xsd:string)