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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/jssc/KaoHCLCLLT21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hsuan-Yu_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jia-Jyun_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ke-Horng_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sheng-Hsi_Hung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shian-Ru_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsung-Yen_Tsai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ying-Hsi_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Yung_Kao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FJSSC.2021.3103875>
foaf:homepage <https://doi.org/10.1109/JSSC.2021.3103875>
dc:identifier DBLP journals/jssc/KaoHCLCLLT21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FJSSC.2021.3103875 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/jssc>
rdfs:label Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hsuan-Yu_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jia-Jyun_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ke-Horng_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sheng-Hsi_Hung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shian-Ru_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsung-Yen_Tsai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ying-Hsi_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Yung_Kao>
swrc:number 12 (xsd:string)
swrc:pages 3619-3627 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/jssc/KaoHCLCLLT21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/jssc/KaoHCLCLLT21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/jssc/jssc56.html#KaoHCLCLLT21>
rdfs:seeAlso <https://doi.org/10.1109/JSSC.2021.3103875>
dc:title Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 56 (xsd:string)