A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/jssc/KimYLCCLLKYDKKLTKLSB24
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A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.
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A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.
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