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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/jssc/KulkarniTANATD16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlos_Tokunaga>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Charles_Augustine>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/James_W._Tschanz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Paolo_A._Aseron>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Trang_Nguyen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FJSSC.2015.2463083>
foaf:homepage <https://doi.org/10.1109/JSSC.2015.2463083>
dc:identifier DBLP journals/jssc/KulkarniTANATD16 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FJSSC.2015.2463083 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/jssc>
rdfs:label A 409 GOPS/W Adaptive and Resilient Domino Register File in 22 nm Tri-Gate CMOS Featuring In-Situ Timing Margin and Error Detection for Tolerance to Within-Die Variation, Voltage Droop, Temperature and Aging. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlos_Tokunaga>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Charles_Augustine>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/James_W._Tschanz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Paolo_A._Aseron>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Trang_Nguyen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
swrc:number 1 (xsd:string)
swrc:pages 117-129 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/jssc/KulkarniTANATD16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/jssc/KulkarniTANATD16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/jssc/jssc51.html#KulkarniTANATD16>
rdfs:seeAlso <https://doi.org/10.1109/JSSC.2015.2463083>
dc:title A 409 GOPS/W Adaptive and Resilient Domino Register File in 22 nm Tri-Gate CMOS Featuring In-Situ Timing Margin and Error Detection for Tolerance to Within-Die Variation, Voltage Droop, Temperature and Aging. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 51 (xsd:string)