Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/jssc/SimKC04
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/jssc/SimKC04
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jae-Yoon_Sim
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kee-Won_Kwon
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ki-Chul_Chun
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FJSSC.2004.825224
>
foaf:
homepage
<
https://doi.org/10.1109/JSSC.2004.825224
>
dc:
identifier
DBLP journals/jssc/SimKC04
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FJSSC.2004.825224
(xsd:string)
dcterms:
issued
2004
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/jssc
>
rdfs:
label
Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jae-Yoon_Sim
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kee-Won_Kwon
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ki-Chul_Chun
>
swrc:
number
4
(xsd:string)
swrc:
pages
694-703
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/jssc/SimKC04/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/jssc/SimKC04
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/jssc/jssc39.html#SimKC04
>
rdfs:
seeAlso
<
https://doi.org/10.1109/JSSC.2004.825224
>
dc:
title
Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
39
(xsd:string)