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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/jssc/UenoHAA09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ken_Ueno>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Asai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Hirose>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yoshihito_Amemiya>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FJSSC.2009.2021922>
foaf:homepage <https://doi.org/10.1109/JSSC.2009.2021922>
dc:identifier DBLP journals/jssc/UenoHAA09 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FJSSC.2009.2021922 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/jssc>
rdfs:label A 300 nW, 15 ppm¬įC, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ken_Ueno>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Asai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Hirose>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yoshihito_Amemiya>
swrc:number 7 (xsd:string)
swrc:pages 2047-2054 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/jssc/UenoHAA09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/jssc/UenoHAA09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/jssc/jssc44.html#UenoHAA09>
rdfs:seeAlso <https://doi.org/10.1109/JSSC.2009.2021922>
dc:title A 300 nW, 15 ppm¬įC, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 44 (xsd:string)