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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mcm/KamakuraO13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshifumi_Ota>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yoshinari_Kamakura>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mcm.2012.11.013>
foaf:homepage <https://doi.org/10.1016/j.mcm.2012.11.013>
dc:identifier DBLP journals/mcm/KamakuraO13 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mcm.2012.11.013 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mcm>
rdfs:label Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshifumi_Ota>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yoshinari_Kamakura>
swrc:number 1-2 (xsd:string)
swrc:pages 363-367 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mcm/KamakuraO13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mcm/KamakuraO13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mcm/mcm58.html#KamakuraO13>
rdfs:seeAlso <https://doi.org/10.1016/j.mcm.2012.11.013>
dc:title Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 58 (xsd:string)