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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/GangwaniPHGG07>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mridula_Gupta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Parvesh_Gangwani>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._S._Gupta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Subhasis_Haldar>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sujata_Pandey>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2007.07.117>
foaf:homepage <https://doi.org/10.1016/j.mejo.2007.07.117>
dc:identifier DBLP journals/mj/GangwaniPHGG07 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2007.07.117 (xsd:string)
dcterms:issued 2007 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mridula_Gupta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Parvesh_Gangwani>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._S._Gupta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Subhasis_Haldar>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sujata_Pandey>
swrc:number 8-9 (xsd:string)
swrc:pages 848-854 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/GangwaniPHGG07/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/GangwaniPHGG07>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj38.html#GangwaniPHGG07>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2007.07.117>
dc:title A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 38 (xsd:string)