Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE.
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bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mj/HeZYXLZH05
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chang-Chun_Zhu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jing-wen_Zhang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Qing-an_Xu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xiaodong_Yang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xinghui_Liu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xun_Hou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yong-ning_He
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2004.11.005
>
foaf:
homepage
<
https://doi.org/10.1016/j.mejo.2004.11.005
>
dc:
identifier
DBLP journals/mj/HeZYXLZH05
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2Fj.mejo.2004.11.005
(xsd:string)
dcterms:
issued
2005
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mj
>
rdfs:
label
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chang-Chun_Zhu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jing-wen_Zhang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Qing-an_Xu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xiaodong_Yang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xinghui_Liu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xun_Hou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yong-ning_He
>
swrc:
number
2
(xsd:string)
swrc:
pages
125-128
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mj/HeZYXLZH05/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mj/HeZYXLZH05
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mj/mj36.html#HeZYXLZH05
>
rdfs:
seeAlso
<
https://doi.org/10.1016/j.mejo.2004.11.005
>
dc:
title
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
36
(xsd:string)