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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/HentschelWGKDKV19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Debald>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Gro%E2%88%9A%C3%BCer>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Jahn>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Andre_Wachowiak>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Andrei_Vescan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Holger_Kalisch>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Raoul_Hentschel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Simon_Kotzea>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Stefan_Schmult>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thomas_Mikolajick>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2019.07.011>
foaf:homepage <https://doi.org/10.1016/j.mejo.2019.07.011>
dc:identifier DBLP journals/mj/HentschelWGKDKV19 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2019.07.011 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Debald>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Gro%E2%88%9A%C3%BCer>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Jahn>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Andre_Wachowiak>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Andrei_Vescan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Holger_Kalisch>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Raoul_Hentschel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Simon_Kotzea>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Stefan_Schmult>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thomas_Mikolajick>
swrc:pages 42-45 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/HentschelWGKDKV19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/HentschelWGKDKV19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj91.html#HentschelWGKDKV19>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2019.07.011>
dc:title Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 91 (xsd:string)