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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/KaramimaneshAHS21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Abdolreza_Darabi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ebrahim_Abiri>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kourosh_Hassanli>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mehrzad_Karamimanesh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mohammad_Reza_Salehi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2021.105185>
foaf:homepage <https://doi.org/10.1016/j.mejo.2021.105185>
dc:identifier DBLP journals/mj/KaramimaneshAHS21 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2021.105185 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abdolreza_Darabi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ebrahim_Abiri>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kourosh_Hassanli>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mehrzad_Karamimanesh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mohammad_Reza_Salehi>
swrc:pages 105185 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/KaramimaneshAHS21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/KaramimaneshAHS21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj118.html#KaramimaneshAHS21>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2021.105185>
dc:title A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 118 (xsd:string)