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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/KudrawiecMMPPT09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/B._Paszkiewicz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._Misiewicz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Motyka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Tlaczala>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._Kudrawiec>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._Paszkiewicz>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2008.07.028>
foaf:homepage <https://doi.org/10.1016/j.mejo.2008.07.028>
dc:identifier DBLP journals/mj/KudrawiecMMPPT09 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2008.07.028 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/B._Paszkiewicz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Misiewicz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Motyka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Tlaczala>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._Kudrawiec>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._Paszkiewicz>
swrc:number 2 (xsd:string)
swrc:pages 370-372 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/KudrawiecMMPPT09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/KudrawiecMMPPT09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj40.html#KudrawiecMMPPT09>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2008.07.028>
dc:title Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 40 (xsd:string)