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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/LeiFLZYTYZ23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0027>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jian_Fang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ling_Yan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lingli_Tang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xihe_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yibo_Lei>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yingdong_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yisen_Zhang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2023.105692>
foaf:homepage <https://doi.org/10.1016/j.mejo.2023.105692>
dc:identifier DBLP journals/mj/LeiFLZYTYZ23 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2023.105692 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Single-event burnout hardening evaluation with current and electric field redistribution of high voltage LDMOS transistors based on TCAD Simulations. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0027>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jian_Fang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ling_Yan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lingli_Tang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xihe_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yibo_Lei>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yingdong_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yisen_Zhang>
swrc:month February (xsd:string)
swrc:pages 105692 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/LeiFLZYTYZ23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/LeiFLZYTYZ23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj132.html#LeiFLZYTYZ23>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2023.105692>
dc:title Single-event burnout hardening evaluation with current and electric field redistribution of high voltage LDMOS transistors based on TCAD Simulations. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 132 (xsd:string)