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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/LiHLT11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guangxi_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Peicheng_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ran_Liu_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tingao_Tang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2011.06.002>
foaf:homepage <https://doi.org/10.1016/j.mejo.2011.06.002>
dc:identifier DBLP journals/mj/LiHLT11 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2011.06.002 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guangxi_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Peicheng_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ran_Liu_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tingao_Tang>
swrc:number 10 (xsd:string)
swrc:pages 1164-1168 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/LiHLT11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/LiHLT11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj42.html#LiHLT11>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2011.06.002>
dc:title Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 42 (xsd:string)