Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mj/OussalahFGZLASH22
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mj/OussalahFGZLASH22
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Boumediene_Zatout
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Elyes_Garoudja
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fouaz_Lekoui
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mohamed_Henini
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Noureddine_Sengouga
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Rachid_Amrani
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Slimane_Oussalah
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Walid_Filali
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2022.105409
>
foaf:
homepage
<
https://doi.org/10.1016/j.mejo.2022.105409
>
dc:
identifier
DBLP journals/mj/OussalahFGZLASH22
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2Fj.mejo.2022.105409
(xsd:string)
dcterms:
issued
2022
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mj
>
rdfs:
label
Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Boumediene_Zatout
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Elyes_Garoudja
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fouaz_Lekoui
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mohamed_Henini
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Noureddine_Sengouga
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Rachid_Amrani
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Slimane_Oussalah
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Walid_Filali
>
swrc:
pages
105409
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mj/OussalahFGZLASH22/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mj/OussalahFGZLASH22
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mj/mj122.html#OussalahFGZLASH22
>
rdfs:
seeAlso
<
https://doi.org/10.1016/j.mejo.2022.105409
>
dc:
title
Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
122
(xsd:string)