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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/SharmaPS23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Akash_Patnaik>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pankaj_Sharma>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Roshan_Sharma>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2023.105755>
foaf:homepage <https://doi.org/10.1016/j.mejo.2023.105755>
dc:identifier DBLP journals/mj/SharmaPS23 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2023.105755 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Impact of doping concentration and recess depth to achieve enhancement mode operation in ő≤-Ga2O3 MOSFET. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Akash_Patnaik>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pankaj_Sharma>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Roshan_Sharma>
swrc:pages 105755 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/SharmaPS23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/SharmaPS23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj135.html#SharmaPS23>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2023.105755>
dc:title Impact of doping concentration and recess depth to achieve enhancement mode operation in ő≤-Ga2O3 MOSFET. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 135 (xsd:string)