A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement.
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A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement.
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A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement.
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