Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mj/TsangBS03
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mj/TsangBS03
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/C._F._Tsang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/V._N._Bliznetsov
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Y._J._Su
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2003.09.005
>
foaf:
homepage
<
https://doi.org/10.1016/j.mejo.2003.09.005
>
dc:
identifier
DBLP journals/mj/TsangBS03
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2Fj.mejo.2003.09.005
(xsd:string)
dcterms:
issued
2003
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mj
>
rdfs:
label
Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/C._F._Tsang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/V._N._Bliznetsov
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Y._J._Su
>
swrc:
number
11
(xsd:string)
swrc:
pages
1051-1058
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mj/TsangBS03/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mj/TsangBS03
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mj/mj34.html#TsangBS03
>
rdfs:
seeAlso
<
https://doi.org/10.1016/j.mejo.2003.09.005
>
dc:
title
Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
34
(xsd:string)