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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mj/XieSZZWZSQL24>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jie_Wei>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jingyu_Shen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jinpeng_Qiu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pengfei_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shuxiang_Sun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaorong_Luo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xin_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xintong_Xie>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhijia_Zhao_0005>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.mejo.2024.106091>
foaf:homepage <https://doi.org/10.1016/j.mejo.2024.106091>
dc:identifier DBLP journals/mj/XieSZZWZSQL24 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.mejo.2024.106091 (xsd:string)
dcterms:issued 2024 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mj>
rdfs:label Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jie_Wei>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jingyu_Shen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jinpeng_Qiu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pengfei_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shuxiang_Sun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaorong_Luo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xin_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xintong_Xie>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhijia_Zhao_0005>
swrc:month February (xsd:string)
swrc:pages 106091 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mj/XieSZZWZSQL24/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mj/XieSZZWZSQL24>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mj/mj144.html#XieSZZWZSQL24>
rdfs:seeAlso <https://doi.org/10.1016/j.mejo.2024.106091>
dc:title Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 144 (xsd:string)