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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/AresuKPG07>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_Goroll>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Reinhard_Pufall>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Stefano_Aresu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Werner_Kanert>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2007.07.021>
foaf:homepage <https://doi.org/10.1016/j.microrel.2007.07.021>
dc:identifier DBLP journals/mr/AresuKPG07 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2007.07.021 (xsd:string)
dcterms:issued 2007 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_Goroll>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Reinhard_Pufall>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Stefano_Aresu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Werner_Kanert>
swrc:number 9-11 (xsd:string)
swrc:pages 1416-1418 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/AresuKPG07/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/AresuKPG07>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr47.html#AresuKPG07>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2007.07.021>
dc:title Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 47 (xsd:string)