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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/AsllaniFCMP18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alberto_Castellazzi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Asad_Fayyaz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Besar_Asllani>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dominique_Planson>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Herv%E2%88%9A%C2%A9_Morel>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2018.06.047>
foaf:homepage <https://doi.org/10.1016/j.microrel.2018.06.047>
dc:identifier DBLP journals/mr/AsllaniFCMP18 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2018.06.047 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alberto_Castellazzi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Asad_Fayyaz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Besar_Asllani>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dominique_Planson>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Herv%E2%88%9A%C2%A9_Morel>
swrc:pages 604-609 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/AsllaniFCMP18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/AsllaniFCMP18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr88.html#AsllaniFCMP18>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2018.06.047>
dc:title VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 88-90 (xsd:string)