Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.
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bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mr/BerbelFGLBB11
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Alexandre_Boyer
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Binhong_Li
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ignacio_Gil
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/N%E2%88%9A%C2%A9stor_Berbel
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ra%E2%88%9A%C4%BCl_Fern%E2%88%9A%C2%B0ndez-Garc%E2%88%9A%E2%89%A0a
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sonia_Bendhia
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2011.06.041
>
foaf:
homepage
<
https://doi.org/10.1016/j.microrel.2011.06.041
>
dc:
identifier
DBLP journals/mr/BerbelFGLBB11
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2Fj.microrel.2011.06.041
(xsd:string)
dcterms:
issued
2011
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mr
>
rdfs:
label
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Alexandre_Boyer
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Binhong_Li
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ignacio_Gil
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/N%E2%88%9A%C2%A9stor_Berbel
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ra%E2%88%9A%C4%BCl_Fern%E2%88%9A%C2%B0ndez-Garc%E2%88%9A%E2%89%A0a
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sonia_Bendhia
>
swrc:
number
9-11
(xsd:string)
swrc:
pages
1564-1567
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mr/BerbelFGLBB11/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mr/BerbelFGLBB11
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mr/mr51.html#BerbelFGLBB11
>
rdfs:
seeAlso
<
https://doi.org/10.1016/j.microrel.2011.06.041
>
dc:
title
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
51
(xsd:string)