Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mr/BychikhinHRVGP10
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Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation.
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Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation.
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