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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/CaiWLGL13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chao_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chuan_Lv>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junxiu_Wei>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaowu_Cai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhe_Gao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2013.02.007>
foaf:homepage <https://doi.org/10.1016/j.microrel.2013.02.007>
dc:identifier DBLP journals/mr/CaiWLGL13 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2013.02.007 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chao_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chuan_Lv>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junxiu_Wei>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaowu_Cai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhe_Gao>
swrc:number 6 (xsd:string)
swrc:pages 861-866 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/CaiWLGL13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/CaiWLGL13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr53.html#CaiWLGL13>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2013.02.007>
dc:title Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 53 (xsd:string)