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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/ChatterjeeKLTM06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J.-Y._Tewg>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._Majhi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Chatterjee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yue_Kuo>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2005.02.004>
foaf:homepage <https://doi.org/10.1016/j.microrel.2005.02.004>
dc:identifier DBLP journals/mr/ChatterjeeKLTM06 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2005.02.004 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J.-Y._Tewg>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Majhi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Chatterjee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yue_Kuo>
swrc:number 1 (xsd:string)
swrc:pages 69-76 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/ChatterjeeKLTM06/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/ChatterjeeKLTM06>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr46.html#ChatterjeeKLTM06>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2005.02.004>
dc:title Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 46 (xsd:string)