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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/ChiuWCCL15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chia-Hsuan_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Geng-Yen_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hsien-Chin_Chiu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jen-Inn_Chyi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ji-Fan_Chi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2014.09.026>
foaf:homepage <https://doi.org/10.1016/j.microrel.2014.09.026>
dc:identifier DBLP journals/mr/ChiuWCCL15 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2014.09.026 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chia-Hsuan_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Geng-Yen_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hsien-Chin_Chiu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jen-Inn_Chyi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ji-Fan_Chi>
swrc:number 1 (xsd:string)
swrc:pages 48-51 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/ChiuWCCL15/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/ChiuWCCL15>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr55.html#ChiuWCCL15>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2014.09.026>
dc:title N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 55 (xsd:string)